Single FETs, MOSFETs NTY100N10G product image

NTY100N10G

$6.38
  • Description:MOSFET N-CH 100V 123A TO264
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube

SKU:86664565254a Category: Brand:

  
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NTY100N10G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 123A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTY100N10G

  • Description:MOSFET N-CH 100V 123A TO264
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:123A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:10mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:350 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:10110 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):313W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-264
  • Package / Case:TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for NTY100N10G

NTY100N10G

Single FETs, MOSFETs Overview

The NTY100N10G is a through-hole N-channel power MOSFET manufactured by onsemi, housed in a TO-264 package. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 123 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 10 milliohms when driven at 10 V with a 50 A current. Key electrical characteristics include a gate charge (Qg) of 350 nC at 10 V, an input capacitance (Ciss) of 10110 pF at 25 V, and a gate-source voltage limit of ±20 V. It supports a junction temperature range from -55°C to 150°C and handles up to 313 W of power dissipation.

Single FETs, MOSFETs Feature Summary

  • Through-hole mounting configuration for robust mechanical integration
  • High current handling capability suitable for demanding power applications
  • Low on-resistance optimized for efficient power conversion

Single FETs, MOSFETs Applications

  • General purpose power switching circuits
  • Inductive load control systems
  • PWM motor control architectures

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet alignment before implementation. Confirm that the obsolete status does not conflict with long-term production requirements. Ensure thermal management designs accommodate the specified power dissipation limits within the operating temperature range.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current capacity in a through-hole form factor. Evaluate thermal resistance constraints against the 313 W dissipation rating. Compare gate charge specifications against driver capabilities to ensure adequate switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the NTY100 series of N-channel MOSFETs. It utilizes advanced vertical technology to achieve low on-resistance. The TO-264 package provides enhanced thermal performance compared to standard surface-mount options.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes with identical pinouts and electrical ratings. Verify that alternative components meet the same through-hole mounting and thermal dissipation requirements.

NTY100N10GNTY100N10G
$6.38
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