NVB260N65S3

Single FETs, MOSFETs Overview

The NVB260N65S3 is an N-channel enhancement-mode MOSFET from the SuperFET III family, designed for high-efficiency power conversion. It features a 650V drain-source voltage rating and a maximum continuous drain current of 12A at case temperature. The device utilizes charge balance technology to achieve low on-resistance and gate charge, reducing conduction and switching losses. Packaged in a surface-mount TO-263 (D2PAK) format with three pins, it supports operation across a wide temperature range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• SuperFET III charge balance technology for optimized performance
• Enhanced body diode reverse recovery characteristics
• High avalanche energy capability verified by 100% testing
• Automotive grade AEC-Q101 qualification

Single FETs, MOSFETs Applications

• On-board chargers for hybrid and electric vehicles
• DC-DC converters for automotive systems
• Industrial motor drives
• High-frequency AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets to confirm package type and tape-and-reel specifications. Confirm AEC-Q101 compliance status if automotive application is required. Check RoHS and REACH declarations for environmental compliance. Ensure thermal management design accounts for the specified power dissipation limits in the target operating environment.

Single FETs, MOSFETs Selection Notes

Select this component when a balance of low on-resistance and fast switching is required for 650V applications. The SuperFET III architecture offers superior figure-of-merit compared to standard superjunction devices. Consider the TO-263 package for cost-effective surface-mount assembly with adequate heatsinking capabilities for the rated current.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's SuperFET III series, which integrates advanced superjunction technology with optimized gate drive characteristics. The series targets high-frequency switching applications where efficiency and thermal performance are critical. It represents a generation of MOSFETs designed to reduce system size and improve overall power density in modern electronic designs.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include FCB260N65S3 and NTD260N65S3H within the same manufacturer portfolio. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference electrical parameters such as Rds(on) and Qg to ensure equivalent circuit performance.