NVB5405NT4G

Single FETs, MOSFETs Overview

The NVB5405NT4G is an N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 116 A when case-temperature limited. The device utilizes D2PAK surface-mount packaging with three pins. Key electrical parameters include a maximum on-resistance (Rds(on)) of 3.8 mΩ at a gate-source voltage (Vgs) of 10 V, and a typical gate charge of 170 nC at 10 V. The component supports a maximum power dissipation of 290 W at 25°C case temperature and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• High current handling capability suitable for low-voltage power switching applications
• Optimized gate charge characteristics to minimize switching losses during operation
• Low on-resistance design intended to reduce conduction losses in high-current paths

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring efficient step-down or step-up regulation
• High-side switching configurations in power distribution systems
• Motor control interfaces for driving low-voltage actuators

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm package type and automotive qualification status. Ensure the ordering part number matches the required thermal performance specifications for the target application environment. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 40 V N-channel switching with high current capacity. Evaluate thermal management requirements carefully due to the high power dissipation ratings. Confirm that the gate drive voltage aligns with the specified Rds(on) test conditions to ensure optimal efficiency and performance in the final circuit implementation.

Single FETs, MOSFETs Part Context

This component belongs to the NVB series of Power MOSFETs from onsemi, designed for general-purpose power switching. The series typically includes variants with different current and voltage ratings housed in standard surface-mount packages like D2PAK. These devices are engineered to provide reliable performance in compact electronic systems where space and thermal constraints are critical factors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 40 V, 116 A N-channel MOSFETs in D2PAK packages from various manufacturers. Verify pinout compatibility and thermal resistance values before substitution. Alternative part numbers within the same family, such as NTB5405NG, may offer similar electrical characteristics but require validation of package and qualification differences.