Single FETs, MOSFETs NVHL045N065SC1 product image

NVHL045N065SC1

$12.56
  • Description:SIC MOS TO247-3L 650V
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:a0be8b4309fe Category: Brand:

  
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NVHL045N065SC1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SIC MOS TO247-3L 650V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVHL045N065SC1

  • Description:SIC MOS TO247-3L 650V
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V, 18V
  • Rds On (Max) @ Id, Vgs:50mOhm @ 25A, 18V
  • Vgs(th) (Max) @ Id:4.3V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs:105 nC @ 18 V
  • Vgs (Max):+22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:1870 pF @ 325 V
  • FET Feature:-
  • Power Dissipation (Max):291W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for NVHL045N065SC1

NVHL045N065SC1

Single FETs, MOSFETs Overview

The NVHL045N065SC1 is an EliteSiC N-Channel MOSFET from onsemi, rated for 650 V drain-to-source voltage and packaged in a TO-247-3LD. It features a typical RDS(on) of 32 mΩ at VGS = 18 V and 42 mΩ at VGS = 15 V, with a maximum continuous drain current of 66 A at TC = 25°C. The device exhibits ultra-low gate charge (QG(tot) = 105 nC) and low output capacitance (COSS = 162 pF), enabling high-speed switching. It operates within a junction temperature range of -55°C to +175°C and includes avalanche testing.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified and PPAP capable for automotive reliability
  • Ultra-low gate charge and low output capacitance for fast switching
  • 100% avalanche tested for robust performance under stress

Single FETs, MOSFETs Applications

  • Automotive On Board Charger
  • Automotive DC-DC Converter for EV/HEV

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status and halide-free certification requirements against project specifications. Ensure thermal management design aligns with the specified junction-to-case thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and compact size are critical for power conversion stages. The low gate charge reduces driver losses, while the wide operating temperature range supports demanding environments. Evaluate thermal constraints carefully to maximize the continuous current capability within the allowed junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC series, designed for advanced power electronics. It utilizes silicon carbide technology to achieve superior performance compared to traditional silicon devices. The TO-247-3LD package provides efficient heat dissipation suitable for through-hole mounting in high-power applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include NTHL045N065SC1 and NTBL045N065SC1. Verify pinout compatibility and electrical parameters before substitution. Ensure the replacement part meets the same automotive qualification standards if used in regulated applications.

NVHL045N065SC1NVHL045N065SC1
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