NVMFS5C677NLT1G

Single FETs, MOSFETs Overview

The NVMFS5C677NLT1G is a single-channel N-channel enhancement-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 60 V and a continuous drain current of 36 A. The device utilizes a DFN surface-mount package with five pins, measuring 5.1 mm in length, 6.1 mm in width, and 1.95 mm in height. Key electrical parameters include a maximum drain-source on-resistance of 15 mΩ at VGS = 10 V and ID = 10 A, and a typical gate charge of 20 nC at VGS = 10 V. It operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Compact physical footprint suitable for space-constrained printed circuit board designs
• Low conduction losses achieved through minimized drain-source on-resistance
• Reduced switching energy consumption due to low gate charge characteristics
• Automotive-grade reliability certified under the AEC-Q101 standard

Single FETs, MOSFETs Applications

• Automotive electronic systems requiring high reliability
• Power management circuits in compact consumer electronics
• High-efficiency DC-DC converter topologies
• Motor control applications utilizing low-voltage drive signals

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T1G' against official manufacturer documentation to confirm lead-free compliance and tape-and-reel packaging specifications. Ensure that the ordering part number matches the exact electrical ratings required for the target application. Cross-reference the component marking code with the datasheet to authenticate the source and prevent counterfeit components from entering the supply chain.

Single FETs, MOSFETs Selection Notes

Select this component when design constraints demand a balance between high current handling capability and minimal PCB area usage. The 60 V rating provides adequate headroom for standard automotive and industrial bus voltages. Consider the thermal performance limits defined in the datasheet to determine appropriate heatsinking or copper pour requirements for sustained operation at elevated ambient temperatures.

Single FETs, MOSFETs Part Context

This component belongs to the NVMFS5C series of power MOSFETs designed for efficient power switching. The series emphasizes low on-resistance and fast switching speeds to improve overall system efficiency. Manufactured using silicon technology, these devices are engineered to meet stringent automotive quality standards while maintaining compatibility with standard surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for electrically equivalent alternatives within the same voltage and current class. Verify pinout compatibility and thermal resistance values before integrating any substitute part into an existing design layout.