NVMFWS0D63N04XMT1G

Description：SINGLE N-CHANNEL POWER MOSFET 40
Series：-
Mfr：onsemi
Package：Bulk

SKU:6a081e43f3e2 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NVMFWS0D63N04XMT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SINGLE N-CHANNEL POWER MOSFET 40. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVMFWS0D63N04XMT1G

Description：SINGLE N-CHANNEL POWER MOSFET 40
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：384A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：0.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs：92.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5862 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case：8-PowerTDFN, 5 Leads

Single FETs, MOSFETs datasheet and documents for NVMFWS0D63N04XMT1G

NVMFWS0D63N04XMT1G

Single FETs, MOSFETs Overview

The onsemi NVMFWS0D63N04XMT1G is a single N-channel power MOSFET in a DFNW5 (SO-8FL) package. It features a drain-to-source voltage of 40 V and a maximum continuous drain current of 384 A at TC = 25 °C. The device has a typical RDS(on) of 0.6 mΩ at VGS = 10 V and ID = 30 A. Total gate charge is typically 92.2 nC. Power dissipation reaches 157 W at TC = 25 °C, with a junction-to-case thermal resistance of 0.95 °C/W. Operating temperature ranges from −55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Low RDS(on) minimizes conduction losses for high efficiency.
Low capacitance reduces driver losses during switching.
Small footprint allows for compact circuit board designs.
AEC-Q101 qualified and PPAP capable for automotive reliability.

Single FETs, MOSFETs Applications

Motor drive circuits
Battery protection systems
Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation. The T1G suffix indicates standard tape and reel packaging. Confirm RoHS compliance and Pb-Free status requirements match project specifications. Ensure the DFNW5 package dimensions align with PCB layout constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction loss and high current handling are critical. The 40 V rating suits low-voltage applications. Verify that the gate threshold voltage and total gate charge meet the driving circuit capabilities. Consider the thermal resistance values for adequate heat sinking or copper pad design to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This part belongs to the NVMFWS series of single N-channel MOSFETs from onsemi. It utilizes advanced silicon technology to achieve high current density in a small surface-mount package. The SO-8FL form factor provides improved thermal performance compared to traditional packages while maintaining a compact physical profile suitable for modern electronics.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 40 V ratings and comparable RDS(on) values. Ensure pinout compatibility with the DFNW5 package if direct replacement is required. Verify that thermal characteristics and maximum current ratings meet or exceed the original design requirements.