Single FETs, MOSFETs NVMYS021N06CLTWG product image

NVMYS021N06CLTWG

$0.94
  • Description:MOSFET N-CH 60V 9.8A/27A 4LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e10197c30c49 Category: Brand:

  
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NVMYS021N06CLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 9.8A/27A 4LFPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVMYS021N06CLTWG

  • Description:MOSFET N-CH 60V 9.8A/27A 4LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:9.8A (Ta), 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:21mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 28W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK4 (5x6)
  • Package / Case:SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for NVMYS021N06CLTWG

NVMYS021N06CLTWG

Single FETs, MOSFETs Overview

The NVMYS021N06CLTWG is a single-channel, surface-mount N-channel power MOSFET manufactured by onsemi. It features a 60V drain-source voltage rating and utilizes silicon technology within an LFPAK4 (5x6) package. The device supports continuous drain currents of 9.8A at ambient temperature and 27A at case temperature, with a maximum power dissipation of 3.8W at ambient and 28W at case conditions. It exhibits a maximum on-resistance of 21 milliohms at 10V gate drive and 10A current, alongside a maximum gate charge of 5nC at 10V. The component operates across a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
  • Low gate charge characteristics facilitate efficient switching operations and reduce driver circuit requirements.
  • Compact LFPAK4 footprint enables integration into space-constrained printed circuit board designs.

Single FETs, MOSFETs Applications

  • Automotive electronic systems requiring qualified discrete components
  • General-purpose power switching applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact electrical specifications required for the target application. Cross-reference the datasheet revision history to validate technical parameters before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with automotive qualification is necessary. The LFPAK4 package offers a balance between thermal performance and board space efficiency. Ensure the design accounts for the specified current derating curves relative to the operating case temperature.

Single FETs, MOSFETs Part Context

This device belongs to the NVMYS series of power MOSFETs from onsemi, designed for high-efficiency switching applications. The series emphasizes low on-resistance and fast switching speeds within compact surface-mount packages suitable for modern electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or distributor substitution tools to identify compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementing any substitute component in existing designs.

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