NVTFS6H850NTAG

Single FETs, MOSFETs Overview

The NVTFS6H850NTAG is an N-channel enhancement mode MOSFET from onsemi, designed for high-performance power switching applications. It features a maximum drain-source voltage of 80 V and a continuous drain current of 68 A at case temperature. The device exhibits a low on-resistance of 9.5 mΩ at 10 V gate drive, contributing to efficient power management. Packaged in an 8-WDFN (3.3x3.3 mm) surface-mount footprint, it supports a junction temperature range from -55°C to +175°C with a maximum power dissipation of 107 W at case temperature.

Single FETs, MOSFETs Feature Summary

• Compact 3.3 x 3.3 mm WDFN-8 package optimized for space-constrained PCB layouts
• Low on-resistance reduces conduction losses and improves thermal efficiency
• AEC-Q101 qualified for automotive reliability standards
• Enhanced wettable flanks design facilitates automated optical inspection

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• DC-DC converter modules
• Motor control circuits
• Industrial load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure the ordering part number matches the required packaging format. Confirm RoHS compliance status through manufacturer declarations. Validate that the component meets the specific environmental operating requirements of the target application before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling is required within a minimal board area. The 80 V rating suits 48 V automotive architectures. Evaluate thermal management needs given the 107 W dissipation capability. Consider the low gate charge for driving efficiency in high-frequency switching environments compared to higher capacitance alternatives.

Single FETs, MOSFETs Part Context

This device belongs to the NVTFS6H850N series, representing onsemi's trench technology for power MOSFETs. The series targets automotive and industrial sectors demanding robust performance. The WDFN package provides superior thermal conductivity compared to traditional plastic packages. It integrates body diode characteristics suitable for synchronous rectification applications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include NVTFS6H850NL or NVTFS6H850NWFTAG. Verify pin compatibility and thermal resistance values. Check if alternative suffixes offer different packaging or lead-free specifications. Ensure substitute parts maintain the same AEC-Q101 qualification level.