NVTFS6H888NTAG

Single FETs, MOSFETs Overview

The NVTFS6H888NTAG is a single N-channel enhancement mode power MOSFET manufactured by onsemi. It features an 80 V drain-source breakdown voltage and a continuous drain current of 13 A. The device exhibits a maximum on-resistance of 55 mΩ at 10 V gate drive. It operates within a temperature range of -55 °C to +175 °C junction temperature. The component utilizes a WDFN-8 surface-mount package with wettable flanks for enhanced solder joint inspection. Key electrical characteristics include a gate charge of 4.7 nC, a forward transconductance of 18.5 S, and switching times of 15 ns rise and 11 ns fall.

Single FETs, MOSFETs Feature Summary

• Wettable flank design in the WDFN-8 package facilitates reliable soldering and X-ray inspection.
• AEC-Q101 qualified for automotive electronics applications requiring high reliability.
• Low on-resistance minimizes conduction losses during operation.
• Enhanced thermal performance supports operation up to 175 °C junction temperature.

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-side load switches
• DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TAG' against the manufacturer's official datasheet to confirm packaging details and tape-and-reel specifications. Ensure the procurement channel provides traceability documentation required for automotive-grade components. Confirm RoHS compliance status through the supplier's declaration of conformity prior to ordering.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V rating and low Rds(on) are required in a compact footprint. The WDFN-8 package offers superior thermal dissipation compared to standard SO-8 variants. Consider the 13 A current capability relative to the expected thermal environment and PCB copper area. Verify that the gate drive voltage aligns with the specified threshold and full enhancement requirements.

Single FETs, MOSFETs Part Context

This part belongs to the NVTFS6H888N series of trench technology MOSFETs designed for efficiency and ruggedness. The series targets applications demanding low loss and high reliability in space-constrained environments. The wettable flank feature distinguishes it from standard packages by improving solder visibility and joint integrity.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 80 V rating, 55 mΩ max Rds(on), and WDFN-8 package dimensions. Verify pinout compatibility and thermal resistance values. Check if alternative parts offer equivalent AEC-Q101 qualification if automotive use is intended.