PBSS3540M,315

Single Bipolar Transistors Overview

The PBSS3540M is a PNP low VCEsat transistor housed in a DFN1006-3 (SOT883) leadless ultra-small plastic package. It features a collector-emitter voltage of -40 V and a continuous collector current of -500 mA, with a peak pulse current capability of -1 A. The device exhibits a typical collector-emitter saturation resistance of 440 mΩ under specified pulsed conditions. Thermal performance includes a junction-to-ambient thermal resistance of 290 K/W on an FR4 PCB. The component is qualified to AEC-Q101 standards for automotive applications.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for high efficiency
• High collector current capability with robust construction
• AEC-Q101 qualified for automotive reliability
• Ultra-small leadless DFN1006-3 package design

Single Bipolar Transistors Applications

• DC-DC converter power management
• Supply line switching circuits
• Battery charger systems
• LCD backlighting drivers
• Inductive load drivers such as relays and buzzers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging configuration. Confirm that the DFN1006-3 footprint aligns with the target PCB layout constraints. Ensure design margins respect the absolute maximum ratings for voltage and current. Validate thermal dissipation requirements against the specified junction-to-ambient resistance values for the intended operating environment.

Single Bipolar Transistors Selection Notes

Select this component when space-constrained designs require a PNP switch with minimal saturation voltage. The SOT883 package suits high-density boards where traditional leads are impractical. Consider the -40 V rating and -500 mA continuous current limits for appropriate load matching. The AEC-Q101 qualification makes it suitable for automotive environments requiring enhanced reliability and thermal endurance compared to standard commercial grades.

Single Bipolar Transistors Part Context

This device belongs to Nexperia's portfolio of low VCEsat transistors designed for efficient power switching. It serves as the PNP complement to the N-channel PBSS2540M. The DFN1006-3 package provides a compact solution for modern electronics requiring reduced board area while maintaining robust electrical performance and thermal characteristics for demanding applications.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the PBSS2540M as the NPN complement. No other direct substitute part numbers are listed in the official documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers' components.

Single Bipolar Transistors FAQ

What is the maximum peak collector current allowed?

The maximum peak collector current (ICM) is -1 A for single pulses with a duration of 1 ms or less.

Is this transistor suitable for automotive applications?

Yes, the PBSS3540M is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.

What is the package type and marking code?

It uses the DFN1006-3 (SOT883) leadless package, and the marking code is DA.