PBSS5350X,146

Single Bipolar Transistors Overview

The Nexperia PBSS5350X,146 is a PNP low VCEsat transistor housed in a SOT89 plastic surface-mounted package. It features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -3 A, with a peak current (ICM) capability of -5 A. The device exhibits a typical collector-emitter saturation resistance (RCEsat) of 90 mΩ under pulsed conditions at IC = -2 A and IB = -200 mA. Thermal performance includes a junction-to-ambient thermal resistance (Rth(j-a)) of 80 K/W on a standard FR4 PCB footprint. The component is qualified according to the AEC-Q101 automotive standard.

Single Bipolar Transistors Feature Summary

• SOT89 (SC-62) small and flat lead Surface-Mounted Device (SMD) plastic package
• Low collector-emitter saturation voltage (VCEsat)
• High collector current capability for both continuous (IC) and peak (ICM) operation
• AEC-Q101 qualified for automotive applications

Single Bipolar Transistors Applications

• Power management circuits
• DC/DC converters
• Supply line switching
• Battery charger systems
• LCD backlighting drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Confirm that the delivered part matches the PBSS5350X type number and SOT89 package outline. Ensure compliance with the AEC-Q101 qualification requirements if intended for automotive use. Check for any recent product change notices regarding marking codes or pinning configurations before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current handling and low saturation voltage is required in a compact SOT89 form factor. Consider the thermal resistance characteristics relative to the expected PCB copper area and mounting pad size for power dissipation calculations. Verify that the -50 V breakdown voltage meets the circuit's maximum operating voltage requirements. Evaluate the base drive current needs to ensure the transistor remains in deep saturation for optimal efficiency.

Single Bipolar Transistors Part Context

The PBSS5350X belongs to Nexperia's family of low VCEsat transistors designed for high-efficiency switching applications. It serves as the PNP complement to the NPN PBSS4350X. The device utilizes silicon technology and is optimized for reduced heat generation through lower saturation voltages compared to conventional transistors. This allows for smaller printed-circuit board requirements and improved overall system efficiency in power management roles.

Single Bipolar Transistors Replacement Considerations

The NPN complement is the PBSS4350X. For direct replacement within the same series, verify the specific ordering suffix matches the desired packaging variant.