PBSS8110T,215

Single Bipolar Transistors Overview

The PBSS8110T,215 is an NPN low VCEsat transistor manufactured by Nexperia in a SOT-23 (TO-236AB) surface-mount package. It supports a maximum collector-emitter voltage of 100 V and a continuous collector current of 1 A, with a peak pulse current capability of 3 A. The device features a typical collector-emitter saturation resistance of 165 mΩ at IC = 1 A and IB = 100 mA. Total power dissipation reaches 480 mW at 25 °C ambient temperature. Junction temperature ranges from -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for improved efficiency
• High collector current capability for robust switching performance

Single Bipolar Transistors Applications

• Automotive 42 V power systems
• DC/DC converters and supply line switching
• Inductive load drivers such as relays and motors
• LCD backlighting circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component version aligns with the latest product data sheet revision to ensure accurate electrical characteristics. Check for any automotive qualification requirements if the application demands specific reliability standards beyond standard industrial specifications.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage is critical for minimizing heat generation in high-current switching applications. Ensure the design accommodates the 1 A continuous current limit and the thermal constraints defined by the junction-to-ambient resistance. Verify that the SOT-23 package footprint meets the PCB layout requirements for the intended assembly process.

Single Bipolar Transistors Part Context

This NPN transistor belongs to the BISS (Bipolar Inverted Silicon Switching) family designed for low saturation voltage applications. It serves as the complement to the PBSS9110T PNP device. The technology utilizes silicon construction optimized for efficient power management in compact surface-mount designs.

Single Bipolar Transistors Replacement Considerations

The PBSS9110T is the documented PNP complement within the same series. No other direct substitute part numbers are confirmed in the official documentation.

Single Bipolar Transistors FAQ

What is the peak collector current capability?

The peak collector current (ICM) is rated at 3 A for single pulses with a duration of 1 ms or less.

How does the collector-emitter saturation voltage vary with temperature?

The saturation voltage increases at lower temperatures (-55 °C) and decreases at higher temperatures (100 °C) relative to the typical value at 25 °C.