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PJD1NA60A_L2_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 600V N-CHANNEL MOSFET. Review the specifications below when checking this part for your BOM.
The PJD1NA60A_L2_00001 is an N-Channel MOSFET manufactured by Panjit International Inc. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 1 A at 25°C ambient temperature. The device is housed in a surface-mount TO-252AA package with a maximum power dissipation of 28 W under case conditions. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix _L2_00001 against official Panjit documentation to confirm current production status, as some sources indicate this variant may be obsolete. Ensure compatibility with RoHS3 standards and confirm the exact packaging configuration required for your assembly line before placing orders.
Select this component when a 600 V breakdown voltage and 1 A continuous current capability are required in a compact SMD form factor. The TO-252AA package provides superior heat dissipation compared to smaller outlines. Confirm that the gate drive requirements align with the threshold voltage specifications provided in the official datasheet.
This part belongs to the PJD1NA series of high-voltage N-Channel MOSFETs from Panjit. These devices are designed for general-purpose switching applications requiring high voltage tolerance. The L2 suffix typically denotes specific tape-and-reel packaging or manufacturing lot characteristics defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Panjit International Inc. directly for qualified alternatives or cross-reference guides.
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