PMEM4010ND,115

Single Bipolar Transistors Overview

The PMEM4010ND,115 is an NPN transistor/Schottky diode module manufactured by NXP USA Inc. It integrates a low VCEsat NPN transistor and a planar Schottky barrier diode with an integrated guard ring in a SOT457 (SC-74) small plastic package. The device supports a collector current of 1 A DC and a continuous forward current of 1 A for the diode. Total power dissipation is rated at 600 mW. The transistor offers a collector-base voltage of 40 V and a transition frequency of 150 MHz. The Schottky diode provides a continuous reverse voltage of 20 V.

Single Bipolar Transistors Feature Summary

• Combines an NPN transistor with low saturation voltage and high current capability with a planar Schottky barrier diode featuring an integrated guard ring for stress protection.
• Designed to reduce required PCB area and pick-and-place costs through its compact SOT457 surface-mount package.
• Provides ultra-high-speed switching and very low forward voltage characteristics for the integrated diode component.

Single Bipolar Transistors Applications

• DC/DC convertors
• Inductive load drivers
• General purpose load drivers
• Reverse polarity protection circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and handling specifications. Confirm the product status as production data sheets may be superseded. Ensure compatibility with automated assembly processes given the leadless SMD package design. Cross-reference thermal resistance values with actual mounting pad configurations on the target printed-circuit board.

Single Bipolar Transistors Selection Notes

Select this module when space constraints require integrating both switching and freewheeling functions into a single footprint. The low collector-emitter saturation voltage makes it suitable for efficient load driving applications. Consider the 20 V reverse voltage rating of the integrated diode when designing for inductive kickback suppression or reverse polarity protection scenarios.

Single Bipolar Transistors Part Context

This component belongs to the discrete semiconductor category, specifically functioning as a combined transistor and diode module. It serves as the NPN complement to the PMEM4010PD PNP variant. The device utilizes the SOT457 outline, also known as SC-74, which is a standard small plastic surface-mount package designed for high-density electronic assemblies.

Single Bipolar Transistors Replacement Considerations

• PMEM4010PD

Single Bipolar Transistors FAQ

What is the function of the integrated guard ring in the Schottky diode?

The integrated guard ring provides stress protection for the planar Schottky barrier diode structure.

How does the PMEM4010ND differ from the PMEM4010PD?

The PMEM4010ND is an NPN transistor/Schottky diode module, whereas the PMEM4010PD is its PNP complement.

What is the maximum continuous forward current for the integrated diode?

The maximum continuous forward current (IF) for the Schottky barrier diode is 1 A.