PMN30UNH

$0.30

Description：PMN30UN/SOT457/SC-74
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f412565eb5de Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PMN30UNH is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PMN30UN/SOT457/SC-74. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PMN30UNH

Description：PMN30UN/SOT457/SC-74
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：635 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：530mW (Ta), 4.46W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-TSOP
Package / Case：SC-74, SOT-457

Single FETs, MOSFETs datasheet and documents for PMN30UNH

PMN30UNH

Single FETs, MOSFETs Overview

The PMN30UNH is an N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in a TSOP6 (SOT457) surface-mounted plastic package. The device features a drain-source voltage rating of 30 V, a gate-source voltage limit of ±12 V, and a continuous drain current of 5.7 A at 25 °C. Its typical on-state resistance is 33 mΩ at VGS = 4.5 V. Total power dissipation reaches 1.24 W, with a junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Trench MOSFET technology for very fast switching
Low threshold voltage for logic-level compatibility
Enhanced power dissipation capability

Single FETs, MOSFETs Applications

LED driver
Power management
Low-side load switch
Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'H' against the official Nexperia datasheet to confirm it denotes the standard tape-and-reel packaging variant. Confirm RoHS compliance status and check for any automotive qualification disclaimers if used in vehicle electronics. Ensure the ordering code matches the exact pinout and marking code H2 specified in the product documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds within a compact SMD footprint. Evaluate thermal performance based on the specified junction-to-ambient resistance values. Consider the 30 V breakdown voltage and 5.7 A current limits when designing the circuit to ensure operation remains within absolute maximum ratings under all expected conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PMN30 series of N-channel Trench MOSFETs. These devices are designed for general-purpose switching applications where small form factors are required. The SOT457 package provides efficient heat dissipation relative to its size, making it suitable for dense PCB layouts in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as the PMN30UNE or PMN30ENEA variants. Verify that alternative parts match the 30 V rating, SOT457 package dimensions, and electrical characteristics like RDS(on) and threshold voltage before implementation.