PMN38EN,135

Single FETs, MOSFETs Overview

The PMN38EN,135 is a logic-level N-channel TrenchMOS enhancement mode Field-Effect Transistor housed in a SOT457 (TSOP6) surface-mounted plastic package. It features a drain-source voltage rating of -30 V and a continuous drain current of -5.4 A at 25 °C. The device exhibits a typical on-state resistance of 38 mΩ at VGS = 4.5 V and ID = 2.8 A. Key electrical parameters include a total gate charge of 6.1 nC and an input capacitance of 495 pF. Designed for high-speed switching applications, it supports junction temperatures up to 150 °C.

Single FETs, MOSFETs Feature Summary

• Logic-level threshold compatibility for direct drive from standard logic interfaces
• TrenchMOS technology enabling very fast switching speeds with low gate charge
• Surface-mounted TSOP6 package design optimized for automated assembly

Single FETs, MOSFETs Applications

• Battery powered motor control
• Driver FET in DC-to-DC converters
• High speed switch in set top box power supplies
• Load switch in notebook computers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity configuration. Confirm that the component status aligns with current production availability through official Nexperia channels. Ensure the datasheet revision corresponds to the latest published specifications before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-state resistance at logic-level gate voltages. Evaluate thermal management requirements based on the specified power dissipation limits and thermal resistance characteristics. Consider the package dimensions and pinout compatibility during PCB layout planning to ensure proper heat sinking and signal integrity.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PMN series of N-channel TrenchMOS logic level FETs. These devices are engineered for computing, communications, consumer, and industrial markets. The series utilizes advanced trench technology to achieve superior switching performance compared to standard planar MOSFETs within similar package constraints.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other PMN series variants such as PMN38ENA or PMN40ENA for potential functional equivalents. Verify pinout compatibility and electrical parameter margins when substituting components in existing designs.