PSMB050N10NS2_R2_00601

Single FETs, MOSFETs Overview

The PSMB050N10NS2 is a 100V N-Channel Enhancement Mode MOSFET in a TO-263 package. It features low on-resistance, with RDS(ON) max < 5.0 mΩ at VGS=10V/ID=50A and < 7.0 mΩ at VGS=6V/ID=25A. The device supports continuous drain currents of 120A at 25°C case temperature and 76A at 100°C. Key electrical parameters include a breakdown voltage of 100V, gate threshold voltage of 1.8–3.8V, total gate charge of 40.5 nC typical, and input capacitance of 3010 pF typical. Thermal resistance junction-to-case is 0.9 °C/W.

Single FETs, MOSFETs Feature Summary

• Low on-state resistance for efficient power conduction
• High switching speed with low reverse transfer capacitance
• Compliant with EU RoHS 2.0 and IEC 61249 green molding standards

Single FETs, MOSFETs Applications

• Power supply synchronous rectification
• Battery Management Systems (BMS)
• BLDC motor driver switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging type, as the datasheet indicates availability in both tubes (50pcs) and reels (800pcs). Confirm that the component meets the specific thermal and electrical requirements of your design, particularly regarding the maximum junction temperature and current derating curves provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses at 100V ratings. Consider the thermal resistance and package size when designing heat dissipation solutions. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Evaluate the switching characteristics against the target frequency requirements to manage dynamic losses effectively.

Single FETs, MOSFETs Part Context

This part belongs to Panjit International Inc.'s lineup of N-Channel Enhancement Mode MOSFETs. It utilizes a TO-263 surface-mount package designed for high-current applications. The device is engineered to provide robust performance in power conversion circuits, balancing low static losses with fast switching capabilities suitable for modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists or cross-reference databases for verified equivalent parts. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics. Verify that alternative components meet the same regulatory compliance standards if required by the end application.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 480 A at a case temperature of 25°C.

Is the device suitable for avalanche energy applications?

Yes, the datasheet specifies a single pulse avalanche energy rating of 318 mJ and an avalanche current of 50 A.