PSMN1R0-100CSFJ

$8.89

Description：PSMN1R0-100CSF/SOT8005A/CCPAK1
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:af10b061b294 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN1R0-100CSFJ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PSMN1R0-100CSF/SOT8005A/CCPAK1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN1R0-100CSFJ

Description：PSMN1R0-100CSF/SOT8005A/CCPAK1
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：460A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.04mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：539 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：33624 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.55kW (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：CCPAK1212i
Package / Case：12-BESOP (0.370", 9.40mm Width), Exposed Pad

Single FETs, MOSFETs datasheet and documents for PSMN1R0-100CSFJ

PSMN1R0-100CSFJ

Single FETs, MOSFETs Overview

The Nexperia PSMN1R0-100CSFJ is a NextPower 100 V, N-channel standard level gate drive MOSFET housed in a CCPAK1212i (SOT8005A) package. It features a maximum drain-source voltage of 100 V and a continuous drain current rating of 460 A at Tmb = 25 °C. The device exhibits a typical on-state resistance of 0.83 mΩ and a total gate charge of 359 nC. Qualified for junction temperatures up to 175 °C, it offers a total power dissipation of 1.55 kW and supports peak pulsed currents up to 3216 A.

Single FETs, MOSFETs Feature Summary

Inverted package design suitable for top-side cooling
Strong avalanche energy rating with 100% testing
Low reverse recovery charge for reduced spiking
Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

Battery protection circuits
High power full and half-bridge configurations
BLDC motor control systems
OR-ing applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'J' against official Nexperia documentation to confirm tape-and-reel packaging or specific marking variations, as datasheets may list base part numbers differently. Confirm that the component meets all required environmental standards for your specific deployment context before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for high-current industrial applications requiring robust thermal management via top-side cooling. The low RDS(on) and optimized gate charge support high-efficiency switching. Ensure PCB layouts accommodate the 12-terminal SOT8005A footprint and provide adequate copper area for heat dissipation to maintain performance within specified thermal limits.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's NextPower series, designed for high-power density applications. The CCPAK1212i package utilizes a copper clip design to enhance current conduction and thermal performance compared to traditional plastic packages. It targets demanding environments where reliability under high stress conditions is critical.

Single FETs, MOSFETs Replacement Considerations

Cross-reference pinouts and thermal characteristics when substituting. Verify that alternative components support the required 460 A continuous current and 175 °C operating temperature without compromising system safety margins.