PSMN3R5-40YSD/2X

Single FETs, MOSFETs Overview

The PSMN3R5-40YSD is a standard level N-channel enhancement mode MOSFET utilizing Nexperia's NextPower-S3 Schottky-Plus technology within an LFPAK56 (SOT669) package. It features a drain-source voltage of 40 V and a typical on-state resistance of 3.5 mΩ at 25 °C. The device supports a continuous drain current of 120 A and total power dissipation of 115 W, with junction temperatures rated up to 175 °C. Dynamic performance includes a total gate charge of 31 nTyp and low reverse recovery characteristics for efficient switching.

Single FETs, MOSFETs Feature Summary

• NextPower-S3 technology delivers superfast switching with soft recovery and low EMI designs
• Schottky-Plus body-diode provides soft switching without high leakage current
• Tighter threshold voltage limits improve paralleling capability
• High reliability copper-clip construction qualified for 175 °C operation

Single FETs, MOSFETs Applications

• Synchronous rectification
• DC-to-DC converters
• High performance and high efficiency power supplies
• BLDC motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against official Nexperia documentation to ensure correct package variant and marking. Confirm that the application environment remains within the specified thermal and electrical absolute maximum ratings. Check for any recent product change notifications or longevity program updates regarding supply continuity before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and robust avalanche ruggedness. The tight VGS(th) limits make it suitable for parallel configurations where current sharing is critical. Ensure the PCB layout accommodates the exposed mounting base for optimal thermal performance and visual solder joint inspection during assembly processes.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PSMN series of N-channel MOSFETs designed for high-performance power switching. It utilizes advanced TrenchMOS Superjunction technology combined with Schottky-Plus features to minimize conduction and switching losses. The LFPAK56 package offers a compact footprint with enhanced thermal dissipation capabilities compared to traditional plastic packages.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 40 V rating, 3.5 mΩ RDS(on), and LFPAK56 package outline. Verify that substitute devices support similar avalanche energy ratings and have compatible gate charge specifications to maintain system efficiency and switching speeds.