Single FETs, MOSFETs PSMN9R5-30YLC,115 product image

PSMN9R5-30YLC,115

$0.60
  • Description:MOSFET N-CH 30V 44A LFPAK56
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:aac3877292b3 Category: Brand:

  
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PSMN9R5-30YLC,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 44A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN9R5-30YLC,115

  • Description:MOSFET N-CH 30V 44A LFPAK56
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9.8mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:10.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:681 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):34W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN9R5-30YLC,115

PSMN9R5-30YLC,115

Single FETs, MOSFETs Overview

The Nexperia PSMN9R5-30YLC,115 is a logic level enhancement mode N-channel MOSFET housed in an LFPAK (SOT669) package. It utilizes NextPower Superjunction technology to achieve low on-state resistance and high efficiency. Key electrical parameters include a drain-source voltage of 30 V, a continuous drain current of 44 A at 25°C mounting base temperature, and a typical RDSon of 9.8 mΩ at VGS=10V. The device supports junction temperatures from -55°C to 175°C with a total power dissipation of 34 W.

Single FETs, MOSFETs Feature Summary

  • Optimized for 4.5V gate drive using NextPower Superjunction technology
  • Ultra-low gate charge (QG, QGD, QOSS) for high system efficiencies
  • Low parasitic inductance and resistance inherent to the Power SO8 package
  • High reliability construction qualified for operation up to 175°C

Single FETs, MOSFETs Applications

  • DC-to-DC converters
  • Load switching
  • Synchronous buck regulator

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring efficient logic-level switching with minimal gate drive requirements. The NextPower technology ensures superior performance at 4.5V gate voltages compared to standard trench MOSFETs. Ensure the thermal design accommodates the 34W dissipation limit at the specified mounting base temperature to maintain reliability within the 175°C junction rating.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's PSMN series of power MOSFETs designed for industrial, communications, and domestic equipment. The LFPAK package provides a robust surface-mount solution with a large mounting base connected to the drain for effective heat dissipation. It represents a balance between conduction losses and switching speed suitable for general-purpose power management applications.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers' devices with similar voltage and current ratings.

PSMN9R5-30YLC,115PSMN9R5-30YLC,115
$0.60
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