PZTA29

Single Bipolar Transistors Overview

The PZTA29 is an NPN Darlington transistor manufactured by onsemi, housed in a surface-mount SOT-223-4 package. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 800 mA. The device offers a minimum DC current gain (hFE) of 10,000 at 100 mA and 5 V. Its transition frequency is specified at 125 MHz, with a maximum power dissipation of 1 W. The saturation voltage is limited to 1.5 V at 100 µA base and 100 mA collector currents. Operating junction temperature ranges from -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• High current amplification capability provided by the integrated Darlington configuration.
• Robust voltage handling suitable for medium-power switching applications.
• Compact surface-mount footprint designed for automated assembly processes.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Driver stages for relays or solenoids
• Logic interface buffers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material declarations directly with onsemi documentation prior to procurement. Ensure the component matches the required SOT-223-4 pinout and marking layout for your design.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required without external biasing networks. The SOT-223 package provides adequate thermal performance for 1 W dissipation under standard conditions. Verify that the 100 V breakdown voltage meets the circuit's peak voltage requirements. Consider the 125 MHz transition frequency for applicable signal speeds.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete bipolar transistor portfolio, specifically within the NPN Darlington category. It serves as a compact alternative to discrete Darlington pairs, integrating two transistors into a single semiconductor die. The SOT-223-4 package allows for efficient PCB space utilization compared to through-hole equivalents.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult onsemi technical support or authorized distributors for verified cross-reference information based on specific electrical and mechanical constraints.