R6004KNX

$1.03

Description：MOSFET N-CH 600V 4A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk

SKU:94b96f8fdae0 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

R6004KNX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 600V 4A TO220FM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for R6004KNX

Description：MOSFET N-CH 600V 4A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：980mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：10.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FM
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for R6004KNX

R6004KNX

Single FETs, MOSFETs Overview

The R6004KNX is an N-channel silicon power MOSFET manufactured by Rohm Semiconductor, designed for high-efficiency switching applications. It features a drain-source voltage (Vdss) rating of 600 V and a continuous drain current (Id) of 4 A at case temperature. The device utilizes microprocessor technology to achieve low on-resistance, with a typical Rds(on) of 0.9 Ω at Vgs = 10 V. Packaged in the TO-220FM-3 through-hole format, it supports a maximum power dissipation of 40 W and operates within a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

Utilizes microprocessor technology to achieve low on-resistance for improved efficiency.
Features fast switching capabilities suitable for high-frequency power conversion circuits.
Designed with robust construction to facilitate parallel operation for higher current handling.

Single FETs, MOSFETs Applications

Power supply units
AC adapters
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Rohm Semiconductor datasheets before integration. Confirm that the specific suffix matches the required package and tape/reel specifications. Ensure design compliance with RoHS directives and check for any obsolescence notices or end-of-life declarations from the manufacturer prior to final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600 V blocking capability with moderate current ratings. The TO-220FM package offers reliable thermal management for through-hole implementations. Consider the gate charge and switching speed characteristics when designing driver circuits for optimal performance in standard power supply topologies.

Single FETs, MOSFETs Part Context

This part belongs to the R6004 series of N-channel super junction MOSFETs from Rohm Semiconductor. These devices are engineered to balance low conduction losses with fast switching speeds, addressing the demands of modern energy-efficient power electronics. The series provides a standardized solution for general-purpose high-voltage switching applications across various industrial and consumer electronic sectors.