R6030JNZ4C13

Single FETs, MOSFETs Overview

The R6030JNZ4C13 is a third-generation N-channel Power MOSFET from ROHM Semiconductor, utilizing the Prestomos™ technology. It features a 600V drain-source voltage rating and a continuous drain current of 30A. The device offers a typical on-resistance (Rds(on)) of 0.11Ω at Vgs=15V and 0.11Ω at drive conditions. Key electrical parameters include a total gate charge (Qg) of 74nC, power dissipation of 370W, and a fast reverse recovery time (trr). It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Third-generation Prestomos™ technology for optimized switching performance
• Fast reverse recovery time suitable for high-speed applications
• Low on-resistance for improved efficiency
• Enhanced design flexibility for motor drives

Single FETs, MOSFETs Applications

• Electric vehicle charging stations
• Motor drives for home appliances such as refrigerators and air conditioners
• Inverter circuits
• General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix C13 against official datasheets to confirm tube packaging and lead-free plating compliance. Ensure the component status is listed as recommended for new designs rather than obsolete or limited availability. Cross-reference the RoHS directive status with the manufacturer's latest environmental declarations before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a balance of low conduction loss and fast switching speed is required for 600V applications. The TO-247 package provides robust thermal management for medium-power scenarios. Consider the 74nC gate charge for driver compatibility and the 370W power dissipation capability for heatsink sizing in continuous operation environments.

Single FETs, MOSFETs Part Context

This part belongs to the R60xxJNx series of Prestomos™ MOSFETs, designed to offer industry-leading reverse recovery times. It serves as an upgrade path for older silicon technologies in power conversion systems. The series targets high-efficiency requirements in consumer electronics and automotive infrastructure, excluding direct onboard vehicle equipment use.

Single FETs, MOSFETs Replacement Considerations

The R6030MNZ1 is documented as a similar level replacement with the same pinout, though it is marked as obsolete. Verify if the R6030JNZ4 without the C13 suffix is functionally identical regarding electrical characteristics and packaging before substitution.