RCX330N25

$3.32

Description：MOSFET N-CH 250V 33A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk

SKU:f4d6272fe37a Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RCX330N25 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 250V 33A TO220FM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RCX330N25

Description：MOSFET N-CH 250V 33A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：2.23W (Ta), 40W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FM
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for RCX330N25

RCX330N25

Single FETs, MOSFETs Overview

The RCX330N25 is a single N-channel power MOSFET manufactured by ROHM Semiconductor, designed for through-hole mounting in TO-220FM-3 packages. It features a drain-source breakdown voltage of 250 V and supports a continuous drain current of 33 A. The device exhibits a typical on-resistance of 105 mΩ at a gate-source voltage of 10 V, with a total gate charge of 80 nC. Power dissipation reaches 40 W, while the operating temperature range spans from -55°C to +150°C. Additional electrical characteristics include a threshold voltage of 5 V, maximum gate-source voltage limits of ±30 V, and switching times defined by rise and fall durations.

Single FETs, MOSFETs Feature Summary

Optimized for 10V drive applications to simplify driver circuit requirements
Fast switching speed capabilities for efficient power conversion
Facilitates easy parallel operation for higher current handling
Lead-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

DC-DC converter circuits
Power supply switching stages
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official ROHM documentation before integration. Confirm package integrity and pin alignment for TO-220FM-3 compatibility. Ensure storage conditions remain within specified thermal limits to preserve junction reliability. Cross-reference datasheet revisions to confirm parameter consistency. Validate supplier authorization status for guaranteed traceability.

Single FETs, MOSFETs Selection Notes

Select this component when a 250V rating and 33A continuous current capacity are required in a through-hole format. The 10V gate drive specification suits logic-level interfaces without complex level shifting. Consider the 105 mΩ on-resistance for conduction loss calculations. Evaluate thermal management needs based on the 40W dissipation limit and TO-220FM-3 thermal resistance characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the RCX series of N-channel power MOSFETs from ROHM Semiconductor. The series emphasizes low on-resistance and fast switching performance for general-purpose power switching applications. Manufactured using silicon technology, these devices target industrial and consumer electronics markets requiring reliable discrete power solutions.