RD3E07BBJHRBTL

Single FETs, MOSFETs Overview

The RD3E07BBJHRBTL is a P-channel power MOSFET manufactured by ROHM Semiconductor, designed for automotive applications. It features a -30V drain-source voltage and supports a continuous drain current of ±78A at VGS = -10V. The device exhibits a maximum on-state resistance of 8.5mΩ at VGS = -10V and 12.5mΩ at VGS = -4.5V. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 77W. The component is housed in a TO-252 (DPAK) package.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for efficient switching
• Qualified under AEC-Q101 automotive standards
• 100% avalanche tested for reliability

Single FETs, MOSFETs Applications

• Advanced Driver Assistance Systems (ADAS)
• Automotive information systems
• Vehicle lighting circuits
• Body electronics modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required suffix for packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions adhere to humidity barrier bag requirements to maintain solderability.

Single FETs, MOSFETs Selection Notes

Select this component for high-current automotive switching applications requiring low conduction losses. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance. Verify gate drive voltage compatibility with the threshold characteristics for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the RD3E series of P-channel power MOSFETs from ROHM. It utilizes silicon technology and is packaged in a surface-mount TO-252-3 form factor. The device is specifically engineered to meet the rigorous demands of automotive electronic control units and power distribution networks.

Single FETs, MOSFETs Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions before implementation.