RDX060N60FU6

Description：MOSFET N-CH 600V 6A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk

SKU:6c212eafbdd8 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RDX060N60FU6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 600V 6A TO220FM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RDX060N60FU6

Description：MOSFET N-CH 600V 6A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FM
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for RDX060N60FU6

RDX060N60FU6

Single FETs, MOSFETs Overview

The RDX060N60 is a silicon N-channel MOSFET in a TO-220FM package. It features a 600V drain-source voltage and a continuous drain current of 6A at 25°C case temperature. The device has a typical on-resistance of 0.9Ω at VGS=10V and ID=3.0A, with a total gate charge of 6.5nC. Thermal resistance from channel to case is 3.125°C/W, and power dissipation reaches 40W under the same conditions.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient switching performance
Low input capacitance to reduce drive losses
High resistance to static electricity damage

Single FETs, MOSFETs Applications

General purpose switching circuits
Power supply applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation before procurement, as suffixes may indicate variations in packaging or tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the supplier provides valid traceability data for quality assurance purposes.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V rating and moderate current handling are required in a through-hole package. Consider the 10V drive requirement and the specific thermal resistance characteristics for heat sink design. Evaluate the body diode reverse recovery time if used in synchronous rectification or high-frequency bridge configurations.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's 10V drive N-channel MOSFET lineup, designed for general electronic equipment. It utilizes an epitaxial planar structure to achieve low on-resistance and robust static discharge tolerance within the standard TO-220FM leaded package format.