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RFN10NS4STL is listed in the Single Diodes range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is DIODE STANDARD 430V 10A LPDS. Review the specifications below when checking this part for your BOM.
The RFN10NS4STL is a fast recovery diode manufactured by ROHM Semiconductor, designed for high-efficiency power conversion applications. It features a single configuration housed in a TO-263S (D2PAK) surface-mount package with three terminals. Key electrical specifications include a maximum repetitive reverse voltage of 430 V and an average rectified forward current rating of 10 A. The device exhibits a maximum forward voltage of 1.55 V at 10 A and a maximum reverse leakage current of 0.01 mA at 430 V. Its maximum reverse recovery time is specified as 30 ns under test conditions of 500 mA forward current and 1 A reverse current. The component supports a junction temperature up to 150 °C and operates within a storage temperature range of -55 °C to 150 °C.
Verify the complete ordering part number, which includes the suffix TL, when placing orders. Confirm that the product meets RoHS compliance standards. Note that this component is classified as a standard-grade product and is explicitly not recommended for use in automotive equipment. Ensure the procurement channel provides official datasheets to validate the specific electrical parameters and package dimensions before integration into designs.
Select this component for applications requiring a balance of high voltage blocking capability and moderate current handling in a surface-mount form factor. The 430 V reverse voltage rating suits general AC-DC or DC-DC conversion stages where standard industrial voltages are present. Consider the 10 A current rating against thermal management requirements, as the TO-263S package relies on PCB copper area for heat dissipation. Verify that the 30 ns recovery time aligns with the switching frequency of the target power supply topology.
The RFN10NS4STL belongs to ROHM's line of fast recovery diodes, which utilize silicon epitaxial planar structures. This series is engineered to minimize switching losses and improve overall system efficiency compared to standard recovery diodes. The TO-263S package is a common industry-standard footprint for medium-power discrete semiconductors, facilitating compatibility with existing board layouts designed for D2PAK components.
The RFUH10NS4SFHTL is documented as a similar specification replacement for related RFN series parts. While it shares the same voltage and current ratings, it differs in package type (TO-263S vs. TO-220FN for some variants) and may have slight variations in forward voltage or recovery time. Verify pinout compatibility and thermal characteristics before substituting.
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