RFP30P06

Single FETs, MOSFETs Overview

The RFP30P06 is a P-Channel power MOSFET manufactured using the MegaFET process, designed for high-performance switching applications. It features a maximum drain-to-source voltage of -60 V and a continuous drain current of 30 A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.065 Ω at Vgs = -10 V and Id = -30 A. It operates within a junction temperature range of -55°C to +175°C and includes an integrated source-to-drain diode with a reverse recovery time of 150 ns.

Single FETs, MOSFETs Feature Summary

• Utilizes MegaFET process technology for optimized silicon utilization and performance
• Includes temperature-compensating PSPICE model for circuit simulation
• Capable of direct drive from integrated circuits
• Features unclamped inductive switching (UIS) capability

Single FETs, MOSFETs Applications

• Switching regulators
• Switching converters
• Motor drivers
• Relay drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the RFP30P06 designation corresponds to the TO-220AB package. Other variants such as RFG30P06 (TO-247) or RF1S30P06SM (TO-263AB) exist within the same electrical family. Confirm that the ordering suffix matches the desired packaging format, noting that tape and reel options may require specific suffixes like 9A for surface mount versions.

Single FETs, MOSFETs Selection Notes

Select this component when a robust P-Channel solution with 60V rating and 30A capacity is needed. The low on-resistance supports efficient power handling in thermal-constrained environments. Ensure gate drive voltages remain within the ±20 V limit. Consider the TO-220AB package's thermal resistance characteristics for heat dissipation requirements relative to the application's duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the Fairchild Semiconductor (now onsemi) MegaFET series of power MOSFETs. It shares electrical specifications with the RFG30P06 and RF1S30P06SM, differing primarily in physical packaging. The MegaFET process distinguishes these devices by offering improved performance metrics compared to standard planar technologies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include RFG30P06 (TO-247) and RF1S30P06SM (TO-263AB), which share identical electrical parameters but differ in package type. Verify pinout compatibility and thermal management requirements when substituting between through-hole and surface-mount packages.