RJ1G04BBGTL1

Single FETs, MOSFETs Overview

The RJ1G04BBGTL1 is an N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in a TO-263AB surface-mount package. It features a Drain-Source Voltage (Vds) of 40 V and a continuous Drain Current (Id) of 130 A at Ta. The device exhibits a typical Drain-Source On-State Resistance (Rds(on)) ranging from 2.4 to 4.5 mΩ. Key switching parameters include a Fall Time of 62 ns and a minimum Forward Transconductance of 24 S. This component is designed for high-efficiency power management applications requiring robust current handling and low conduction losses.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode construction optimized for low on-resistance
• High continuous drain current capability suitable for power switching
• Surface-mount TO-263AB package for efficient thermal dissipation

Single FETs, MOSFETs Applications

• DC/DC converter circuits
• Motor driver systems
• General-purpose power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation before integration. Confirm that the TO-263AB package dimensions and pinout align with the target PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and 130 A current capacity are required in a TO-263AB form factor. Consider the Rds(on) range of 2.4–4.5 mΩ for conduction loss calculations. Evaluate the 62 ns fall time and 24 S transconductance for switching speed requirements in the intended circuit topology.

Single FETs, MOSFETs Part Context

This part belongs to ROHM’s RJ1 series of N-channel Power MOSFETs, which are engineered for high-current applications. The series utilizes advanced silicon technology to achieve low on-state resistance within standard surface-mount packages, supporting efficiency improvements in industrial and consumer power supplies.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other ROHM RJ1 series devices or equivalent N-channel MOSFETs offering similar 40 V, 130 A specifications in TO-263AB packages. Verify compatibility of pinouts, thermal characteristics, and electrical parameters such as Rds(on) and switching times.