RJK6026DPP-E0#T2

Single FETs, MOSFETs Overview

The RJK6026DPP-E0#T2 is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 5A at ambient temperature. The device exhibits a maximum on-resistance (RDS(on)) of 2400 milliohms when driven at 10V gate-source voltage. It is housed in a TO-220FP package with three leads, designed for through-hole mounting. The component supports a gate-source voltage of 30V and is qualified for industrial applications.

Single FETs, MOSFETs Feature Summary

• High-voltage capability suitable for robust power switching environments
• Optimized for high-speed power switching operations
• Industrial qualification level ensuring reliability in demanding conditions

Single FETs, MOSFETs Applications

• Industrial power supply circuits
• Automotive electronic systems
• High-voltage AC/DC conversion modules

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix against official Renesas documentation to confirm package type and tape/reel specifications. Ensure the procurement channel provides valid traceability for industrial-grade components. Cross-reference datasheet revisions to confirm electrical parameters match design requirements before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600V blocking voltage with moderate current handling capabilities. The TO-220FP package facilitates thermal management for through-hole implementations. Evaluate the 2400 milliohm on-resistance against system efficiency targets and thermal dissipation constraints under expected load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the RJK series of N-channel power MOSFETs from Renesas. These devices are engineered for general-purpose power switching applications where high voltage isolation and reliable performance are critical. The series supports various packaging options to accommodate different thermal and mechanical design needs.

Single FETs, MOSFETs Replacement Considerations

Consult official Renesas cross-reference lists for verified substitutes. Ensure replacement parts maintain equivalent VDSS, ID, and RDS(on) specifications. Verify package compatibility and pinout alignment to prevent board redesign requirements.