RMLV0408EGSB-4S2#AA0

Memory IC Overview

The RMLV0408EGSB-4S2#AA0 is a 4-Mbit static random-access memory (SRAM) manufactured by Renesas Electronics. It features a memory organization of 512K words by 8 bits and utilizes a parallel interface with an access time of 45 ns. The device operates on a single 3V supply, supporting voltage levels between 2.7 V and 3.6 V. It is housed in a 32-pin TSOP I surface-mount package and is designed for industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

• Asynchronous SRAM architecture utilizing Advanced LPSRAM technology for low power consumption
• Single 3V supply operation compatible with standard logic levels
• High-speed parallel data access with 45 ns maximum access time
• Industrial-grade reliability suitable for battery backup systems

Memory IC Applications

• Battery-backed memory systems requiring low standby current
• Industrial control applications within specified temperature ranges
• Embedded systems utilizing parallel SRAM interfaces
• Data storage buffers in consumer electronics

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix #AA0 matches required packaging and marking specifications. Check for end-of-life status as this series may be subject to discontinuation. Ensure compatibility with existing PCB footprints for 32-TSOP packages before procurement.

Memory IC Selection Notes

Select this component when a 4-Mbit capacity with 8-bit word width is required. The 45 ns speed suits moderate-frequency parallel bus applications. Consider the 3V operating range against system power rails. Evaluate the TSOP I package dimensions against available board space constraints compared to alternative BGA or SOP options.

Memory IC Part Context

This part belongs to the RMLV0408E series of low-power SRAMs. The series is characterized by high density and performance using Renesas's proprietary LPSRAM processes. It serves as a non-volatile-like solution for volatile memory needs where power loss protection is managed externally via battery backup circuits.

Memory IC Replacement Considerations

Direct substitutes include IS62WV5128EBLL-45HLI from ISSI and CY62148G30-45ZAXI from Infineon Technologies. Verify pinout compatibility and electrical parameters such as access time and supply voltage ranges before substitution.