Single FETs, MOSFETs RQ1A070APTR product image

RQ1A070APTR

$0.77
  • Description:MOSFET P-CH 12V 7A TSMT8
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:4425ea2a6c10 Category: Brand:

  
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RQ1A070APTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET P-CH 12V 7A TSMT8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RQ1A070APTR

  • Description:MOSFET P-CH 12V 7A TSMT8
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:14mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:80 nC @ 4.5 V
  • Vgs (Max):-8V
  • Input Capacitance (Ciss) (Max) @ Vds:7800 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):550mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TSMT8
  • Package / Case:8-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for RQ1A070APTR

RQ1A070APTR

Single FETs, MOSFETs Overview

The RQ1A070APTR is a single P-Channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an 8-SMD, flat lead TSMT-8 surface mount package. The device features a drain-source breakdown voltage of 12 V and supports a continuous drain current of 7 A. Key electrical parameters include a gate-source voltage range of -8 V to 8 V, a threshold voltage of 1 V, and a total gate charge of 80 nC. The component operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1.5 W.

Single FETs, MOSFETs Feature Summary

  • Designed for low-voltage driving applications with a specified drive voltage of -1.5 V.
  • Optimized for switching operations utilizing a compact surface-mount form factor.

Single FETs, MOSFETs Applications

  • LED backlighting systems including direct-lit and local dimming configurations
  • General electronic circuit switching

Single FETs, MOSFETs Procurement Notes

Verify the production status carefully as this component may be classified as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors and check for valid replacement alternatives such as the RQ1A070ZPHZGTR if new design implementation is required. Ensure compliance with RoHS standards before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 12 V P-Channel MOSFET capable of handling 7 A loads. Consider the specific on-resistance values at different gate voltages when designing for efficiency. Verify that the thermal management solution accommodates the 1.5 W power dissipation limit within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the ROHM Semiconductor MOSFET product line, specifically categorized under single-channel P-Channel transistors. It is designed for surface-mount assembly and is commonly used in consumer electronics and automotive-grade applications where space constraints and switching performance are critical factors.

Single FETs, MOSFETs Replacement Considerations

The RQ1A070ZPHZGTR is documented as a recommended alternative with the same pinout and package. Verify compatibility regarding the AEC-Q101 qualification status and specific on-resistance characteristics before substitution.

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