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RQ3G100GNTB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 40V 10A 8HSMT. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RQ3G100GNTB
- Description：MOSFET N-CH 40V 10A 8HSMT
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：615 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-HSMT (3.2x3)
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for RQ3G100GNTB
Single FETs, MOSFETs Overview
The RQ3G100GNTB is a single N-channel power MOSFET manufactured by ROHM Semiconductor using silicon technology. It features an HSMT-8 surface-mount package with eight terminals and a compact footprint of 3.3x3.3 mm. The device supports a drain-source voltage of 40V and delivers a continuous drain current of 27A. Its typical on-resistance is 14.1 mΩ at a 4.5V drive, with a gate charge of approximately 16 nC. Power dissipation reaches 14W, operating within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Optimized for low on-resistance operation at standard logic-level gate voltages
- Designed for high-speed switching applications with controlled gate charge characteristics
- Utilizes a compact HSMT-8 surface-mount package for efficient board space utilization
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor driver stages
- Power supply output switches
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'TB' against official documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure design-in compatibility with existing thermal management solutions given the package size and power dissipation ratings.
Single FETs, MOSFETs Selection Notes
Select this component when a 40V rating and 27A current capacity are required in a small form factor. Compare on-resistance values at 4.5V drive against alternative packages to ensure efficiency targets are met. Evaluate thermal performance requirements relative to the 14W dissipation capability in the target application environment.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's RQ3 series of N-channel MOSFETs designed for general-purpose power switching. It serves as a successor or alternative to older designs like the RQ3G100GN, offering improved packaging consistency. The series focuses on balancing conduction losses with switching speeds for modern power electronics.
Single FETs, MOSFETs Replacement Considerations
The RH6G040BGTB1 is documented as a recommended replacement with the same HSMT-8 package. Verify electrical parameter equivalence before substitution.
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