RQ5E070BNTCL

$0.51

Description：MOSFET N-CH 30V 7A TSMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6fd4a3510883 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RQ5E070BNTCL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 7A TSMT3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RQ5E070BNTCL

Description：MOSFET N-CH 30V 7A TSMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：16.1mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSMT3
Package / Case：SC-96

Single FETs, MOSFETs datasheet and documents for RQ5E070BNTCL

RQ5E070BNTCL

Single FETs, MOSFETs Overview

The RQ5E070BNTCL is a single N-channel power MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a TSMT-3 (SC-96) package and utilizes silicon technology. The device supports a drain-source voltage of 30 V and delivers a continuous drain current of 7 A at case temperature. Key electrical characteristics include a maximum on-resistance of 16.1 mΩ and a gate-source threshold voltage of 2.5 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 1 W.

Single FETs, MOSFETs Feature Summary

Single N-channel enhancement mode configuration
Low on-resistance for efficient power switching
Compact TSMT-3 surface-mount packaging

Single FETs, MOSFETs Applications

DC-DC converter circuits
Power management modules
Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before procurement. Confirm that the TSMT-3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the 1 W power dissipation limit under intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with 30 V capability and moderate current handling is required. The low on-resistance makes it suitable for efficiency-critical designs. Consider the TSMT-3 package constraints for high-current applications where thermal performance is critical.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's power MOSFET portfolio, specifically targeting small-signal and medium-power switching applications. The TSMT-3 package offers a balance between current capacity and board space efficiency compared to larger packages.