RS1P600BETB1

$3.22

Description：MOSFET N-CH 100V 17.5A/60A 8HSOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8e0699259823 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RS1P600BETB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 100V 17.5A/60A 8HSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RS1P600BETB1

Description：MOSFET N-CH 100V 17.5A/60A 8HSOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：17.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.7mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id：4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 35W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-HSOP
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for RS1P600BETB1

RS1P600BETB1

Single FETs, MOSFETs Overview

The RS1P600BETB1 is an N-channel power MOSFET manufactured by ROHM Semiconductor. It features a 100V drain-source voltage rating and supports a continuous drain current of ±60A at 25°C case temperature. The device exhibits a typical static drain-source on-state resistance of 7.5mΩ at VGS=10V, with a maximum of 9.7mΩ. Power dissipation reaches 35W at 25°C case temperature. It utilizes the HSOP8 surface-mount package and includes 100% Rg and UIS testing.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient switching
Small surface mount HSOP8 package
Lead-free plating compliant with RoHS standards
Halogen-free construction

Single FETs, MOSFETs Applications

Primary side switch
Motor drives
DC/DC converter

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TB1 to confirm the embossed tape reel packaging format containing 2500 units per reel. Confirm that the component meets lead-free and halogen-free requirements as specified in the datasheet documentation. Ensure compatibility with standard surface mount assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within a compact footprint. Evaluate thermal management strategies to maintain junction temperatures within the 150°C limit during operation. Consider the gate threshold voltage range when designing drive circuits to ensure reliable switching performance under varying load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the RS1P600BE series of N-channel power MOSFETs from ROHM Semiconductor. It is designed for general-purpose power switching applications where low conduction losses are critical. The HSOP8 package provides a balance between thermal performance and board space efficiency for modern electronic designs.