Single FETs, MOSFETs RS1P600BHTB1 product image

RS1P600BHTB1

$3.09
  • Description:NCH 100V 60A, HSOP8, POWER MOSFE
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:699af0140d46 Category: Brand:

  
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RS1P600BHTB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 100V 60A, HSOP8, POWER MOSFE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RS1P600BHTB1

  • Description:NCH 100V 60A, HSOP8, POWER MOSFE
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:8.8mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4080 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):3W (Ta), 35W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-HSOP
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for RS1P600BHTB1

RS1P600BHTB1

Single FETs, MOSFETs Overview

The RS1P600BHTB1 is an N-channel power MOSFET in a surface-mount HSOP8 package. It features a drain-source voltage of 100V and a continuous drain current of 60A at 25°C case temperature. The maximum static drain-source on-state resistance is 8.8mΩ at VGS=10V and 12.9mΩ at VGS=6V. Power dissipation is rated at 35W, with a junction-to-case thermal resistance of 3.5°C/W. The device supports a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance for reduced conduction losses
  • Small surface mount HSOP8 package
  • Lead-free plating compliant with RoHS standards
  • Halogen-free construction

Single FETs, MOSFETs Applications

  • Primary side switch applications
  • Motor drives
  • DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TB1 to confirm tape and reel packaging specifications. Ensure compatibility with standard surface mount assembly processes. Confirm that the application environment remains within the specified operating temperature range and does not exceed absolute maximum ratings. Validate component authenticity through authorized distribution channels.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction loss in compact form factors. Evaluate thermal management requirements based on the 3.5°C/W junction-to-case resistance. Consider gate drive voltage levels when assessing on-state resistance performance. Verify suitability against system voltage and current demands under varying ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's N-channel power MOSFET lineup designed for general-purpose switching applications. The HSOP8 package provides a balance between electrical performance and board space efficiency. It is intended for use in consumer electronics and industrial equipment where moderate voltage and high current handling are required.

Single FETs, MOSFETs Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Cross-reference pinouts, voltage ratings, and thermal characteristics before implementation.

RS1P600BHTB1RS1P600BHTB1
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