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S3BHR7G is listed in the Single Diodes range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE STANDARD 100V 3A DO214AB. Review the specifications below when checking this part for your BOM.
The S3BHR7G is a surface mount rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a glass passivated chip junction and utilizes the DO-214AB (SMC) package for automated placement. The device is rated for a continuous forward current of 3A and a maximum repetitive peak reverse voltage of 100V. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 100A, a maximum DC forward voltage of 1.15V at specified conditions, and a maximum reverse leakage current of 5µA. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'R7G' corresponds to the required tape and reel quantity and packaging format. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the ordering part number matches the exact voltage and current ratings required for the target application circuit design.
Select this component when a 3A general-purpose rectifier is required in an SMC package. The 100V rating suits low-voltage DC applications. Consider the 1.15V forward voltage drop for efficiency calculations. Verify that the operating temperature range meets the environmental requirements of the final assembly.
This part belongs to the S3 series of surface mount rectifiers from Taiwan Semiconductor. The series covers various voltage ratings from 50V to 1000V in the same DO-214AB footprint. The S3B variant specifically denotes the 100V blocking capability within this standardized family of glass-passivated silicon rectifiers.
Compatible substitutes include other manufacturers' 3A 100V SMC rectifiers such as the MBRJ3100 or equivalent generic SMCJ3.0 variants. Ensure pinout compatibility and thermal performance match the original design specifications before substitution.
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