S80KS5122GABHI023

$5.24

Description：IC PSRAM 512MBIT HYPERBUS 24FBGA
Series：HYPERRAM™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:909bd3803ed4 Category: Memory IC Brand: Infineon Technologies

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Product introduction

S80KS5122GABHI023 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC PSRAM 512MBIT HYPERBUS 24FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S80KS5122GABHI023

Description：IC PSRAM 512MBIT HYPERBUS 24FBGA
Series：HYPERRAM™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：PSRAM
Technology：PSRAM (Pseudo SRAM)
Memory Size：512Mbit
Memory Organization：64M x 8
Memory Interface：HyperBus
Clock Frequency：200 MHz
Write Cycle Time - Word, Page：35ns
Voltage - Supply：1.7V ~ 2V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：24-VBGA
Supplier Device Package：24-FBGA (6x8)
Access Time：35 ns
Grade：-
Qualification：-

Memory IC datasheet and documents for S80KS5122GABHI023

S80KS5122GABHI023

Memory IC Overview

The Infineon S80KS5122GABHI023 is a 512-Mbit HYPERRAM self-refresh DRAM featuring a HYPERBUS interface. It operates at a maximum clock rate of 200 MHz with DDR transfers, achieving data throughput up to 400 MBps. The device supports 1.8 V supply voltages and offers configurable burst characteristics including linear and wrapped modes. It utilizes a 24-ball FBGA package and is rated for industrial temperature ranges from -40 °C to +85 °C.

Memory IC Feature Summary

Self-refresh DRAM architecture eliminating host refresh management
HYPERBUS interface supporting single-ended or differential clocking
Configurable burst sequences for linear and wrapped access patterns
Integrated power conservation modes including hybrid sleep and deep power down

Memory IC Applications

Automotive telematics control units
Industrial automation systems
Machine vision applications
Wearable devices requiring low pin count memory

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's current roadmap to confirm availability and lead times. Ensure the selected package variant matches the required thermal and electrical specifications for the target application environment. Cross-reference the datasheet revision history for any updates to timing parameters or signal definitions before finalizing design integration.

Memory IC Selection Notes

Select this component when a high-speed, low-pin-count memory solution is required for embedded systems. The HYPERBUS interface reduces signal count compared to parallel SRAM while maintaining high throughput. Consider the industrial temperature range and self-refresh capabilities for applications where host CPU resources are limited or power efficiency is critical during idle states.

Memory IC Part Context

This part belongs to the KS-2 series of HYPERRAM devices, which utilize 25-nm DRAM technology. It is designed as a pseudo-static RAM (PSRAM) replacement for traditional SRAM in space-constrained designs. The dual-die construction allows for higher density within a standard small outline footprint, supporting complex graphics and data-intensive processing tasks.