SBC847CWT1G

Single Bipolar Transistors Overview

The SBC847CWT1G is an NPN silicon general-purpose transistor from the BC847 series, manufactured by onsemi. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device features a DC current gain (hFE) ranging from 420 to 800 at a collector current of 2.0 mA. Packaged in the SC-70 (SOT-323) surface-mount format, it supports a total power dissipation of 200 mW and functions within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for low-power surface mount applications using the compact SC-70 package
• Qualified for automotive and specialized applications requiring unique site control via AEC-Q101 certification
• Constructed as a lead-free, halogen-free, and brominated flame retardant-free component

Single Bipolar Transistors Applications

• General purpose amplifier circuits
• Low power switching applications
• Automotive electronic systems requiring PPAP capability

Single Bipolar Transistors Procurement Notes

Verify that the ordering prefix 'S' indicates compliance with specific automotive site and control change requirements. Confirm that the suffix 'T1G' corresponds to the standard tape and reel packaging configuration containing three thousand units per reel. Ensure the component meets RoHS standards and matches the specified SC-70 marking code for accurate identification during assembly.

Single Bipolar Transistors Selection Notes

Select this component when high DC current gain is required for signal amplification tasks. The SC-70 package provides a small footprint suitable for space-constrained designs. Verify that the 45 V collector-emitter voltage rating aligns with the circuit's maximum operating conditions. Consider the thermal resistance characteristics if the application involves sustained power dissipation near the maximum limit.

Single Bipolar Transistors Part Context

This part belongs to the BC846/BC847/BC848 family of NPN silicon transistors. The 'C' suffix denotes a specific binning category for higher DC current gain compared to 'A' or 'B' variants. The 'S' prefix differentiates it from standard commercial parts by adhering to stricter automotive quality and traceability protocols defined by AEC-Q101 standards.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC847CWT1G and BC847AWT1G. These alternatives share identical pinouts and electrical ratings but may differ in current gain specifications or packaging prefixes.