SBC856BWT1G

$0.14

Description：TRANS PNP 65V 0.1A SC70-3
Series：-

SKU:483ea0d5dbb3 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

SBC856BWT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 65V 0.1A SC70-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for SBC856BWT1G

Description：TRANS PNP 65V 0.1A SC70-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：65 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
Power - Max：150 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70-3 (SOT323)
Grade：Automotive
Qualification：AEC-Q101

Single Bipolar Transistors datasheet and documents for SBC856BWT1G

SBC856BWT1G

Single Bipolar Transistors Overview

The SBC856BWT1G is a PNP silicon general-purpose transistor manufactured by onsemi. It is housed in an SC-70/SOT-323 surface-mount package designed for low-power applications. The device features a collector-emitter voltage of -65 V, a continuous collector current of -100 mA, and a total power dissipation of 150 mW. It includes the 'S' prefix indicating AEC-Q101 qualification and PPAP capability for automotive use. Electrical characteristics include a DC current gain (hFE) minimum of 220 at -2.0 mA and a transition frequency (fT) of 100 MHz.

Single Bipolar Transistors Feature Summary

AEC-Q101 qualified with PPAP capability for automotive applications
Designed for low-power surface mount applications
Halogen-free and RoHS compliant construction

Single Bipolar Transistors Applications

General purpose amplifier circuits
Automotive electronic systems requiring unique site control
Low-power switching applications

Single Bipolar Transistors Procurement Notes

Verify the presence of the 'S' prefix to confirm AEC-Q101 qualification and PPAP capability. Confirm the specific ordering suffix matches the required tape and reel packaging specifications. Ensure compliance with Pb-free and halogen-free requirements as stated in the datasheet. Validate that the component meets the specific site and control change requirements necessary for your application.

Single Bipolar Transistors Selection Notes

Select this component when AEC-Q101 qualification is mandatory for the design. The SC-70/SOT-323 package is suitable for space-constrained layouts. Consider the -65 V collector-emitter voltage rating for appropriate biasing. Verify thermal resistance limits against the expected ambient temperature conditions to ensure reliable operation within the specified junction temperature range.

Single Bipolar Transistors Part Context

This part belongs to the BC856B series of general-purpose PNP transistors from onsemi. It shares the same electrical characteristics as the BC856BWT1G but includes the 'S' prefix for automotive qualification. The series is designed for low-power surface mount applications using silicon technology.