SCT3040KLGC11

Single FETs, MOSFETs Overview

The SCT3040KLGC11 is a single N-channel Silicon Carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It features a 1200V drain-source breakdown voltage and supports a continuous drain current of 55A at case temperature. The device exhibits a maximum on-resistance of 52 milliohms at 18V gate drive. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 262W. The component utilizes a TO-247-3 through-hole package and meets AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchMOS structure for low on-resistance and fast switching performance
• Features fast reverse recovery characteristics suitable for high-frequency applications
• Designed for easy paralleling and simple gate drive requirements
• Automotive qualified under AEC-Q101 standards

Single FETs, MOSFETs Applications

• Server power supplies requiring high efficiency
• Solar inverters
• Electric vehicle charging stations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm package type and qualification status. Ensure compatibility with thermal management solutions rated for 175°C junction temperatures. Confirm that the TO-247-3 footprint matches the target PCB design. Check for RoHS compliance declarations in the latest datasheet revision before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs demanding high voltage blocking capability with minimal conduction losses. The 52 milliohm resistance offers a balance between cost and performance for medium-current applications. Consider the through-hole mounting option if mechanical robustness is prioritized over surface area constraints. Verify gate drive voltage limits do not exceed the specified maximum ratings during operation.

Single FETs, MOSFETs Part Context

This part belongs to the SCT3x series of SiC MOSFETs from ROHM. It represents a third-generation Trench technology implementation. The device is engineered to replace traditional silicon IGBTs in high-efficiency power conversion systems. It shares family characteristics with other parts in the SCT3040 line but differs in packaging and specific electrical tolerances.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements may include other ROHM SiC MOSFETs in the TO-247-3 package with similar voltage and current ratings. Verify on-resistance and gate charge parameters to ensure equivalent switching performance. Cross-reference with SCT3040KR for potential performance upgrades, noting the package difference.