SDS120J030H3-ISATH

$10.85

Description：DIODE SIL CARB 1200V 95A TO2472L
Series：Sanan TO247
Mfr：Luminus Devices Inc.
Package：Tube

SKU:71ddbf7558ef Category: Single Diodes Brand: Luminus Devices Inc.

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Product introduction

SDS120J030H3-ISATH is listed in the Single Diodes range at ChipApex. The manufacturer field lists Luminus Devices Inc.. Its product description is DIODE SIL CARB 1200V 95A TO2472L. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for SDS120J030H3-ISATH

Description：DIODE SIL CARB 1200V 95A TO2472L
Series：Sanan TO247
Mfr：Luminus Devices Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：95A
Voltage - Forward (Vf) (Max) @ If：1.5 V @ 30 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：72 µA @ 1200 V
Capacitance @ Vr, F：2546pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2L
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for SDS120J030H3-ISATH

SDS120J030H3-ISATH

Single Diodes Overview

The SDS120J030H3-ISATH is a third-generation silicon carbide Schottky barrier diode manufactured by Hunan Sanan Semiconductor. It features a TO-247-2L package and offers a repetitive peak reverse voltage of 1200V with a continuous forward current rating of 95A at 25°C case temperature. The device exhibits a typical forward voltage of 1.30V at 30A and 25°C, alongside a surge non-repetitive forward current capability of 291A. Operating junction temperatures range from -55°C to +175°C.

Single Diodes Feature Summary

Utilizes silicon carbide semiconductor material for high-speed switching performance
Exhibits no reverse recovery charge during turn-off transitions
Demonstrates temperature-independent switching behavior across the operating range
Enables system size reduction through lower thermal management requirements

Single Diodes Applications

Industrial power supplies including industrial UPS systems
Battery chargers
Solar inverters
Switch mode power supplies

Single Diodes Procurement Notes

Verify the manufacturer designation as Hunan Sanan Semiconductor Co., Ltd. when sourcing this component. Confirm the specific ordering suffix ISATH corresponds to the tube packing type containing 300 units per tube. Ensure compatibility with the TO-247-2L mounting configuration and verify RoHS compliance status prior to integration into final assemblies.

Single Diodes Selection Notes

Select this component for applications requiring high-voltage blocking capabilities up to 1200V. Consider the low forward voltage characteristics for improved efficiency in hard-switching environments. Evaluate the thermal resistance specifications against the expected heat dissipation requirements of the target circuit design.

Single Diodes Part Context

This device belongs to the series of third-generation silicon carbide Schottky barrier diodes developed by Hunan Sanan Semiconductor. These components are engineered to provide higher efficiency and operation temperatures compared to traditional silicon-based solutions. The technology supports lightweight system designs suitable for demanding industrial power electronics applications.