SI3457BDV-T1-GE3

Single FETs, MOSFETs Overview

The SI3457BDV-T1-GE3 is a single P-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a surface-mount TSOP-6 package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 3.7 A at case temperature. Its maximum on-resistance is specified at 120 mΩ under standard test conditions, with a gate-source voltage limit of ±20 V. The component supports an operating junction temperature range from -55°C to +150°C and offers a power dissipation capacity of 2 W in free air.

Single FETs, MOSFETs Feature Summary

• Single P-channel configuration utilizing TrenchFET technology for enhanced performance
• Surface-mount TSOP-6 packaging designed for automated assembly processes
• Enhancement mode operation suitable for low-side switching applications

Single FETs, MOSFETs Applications

• Power management circuits requiring P-channel switching
• Battery protection modules
• Load switch implementations in portable electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm exact electrical tolerances and marking codes. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure the ordering part number matches the required tape and reel specifications for your manufacturing line. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement contracts.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel solution is required for 30 V systems. Compare the 120 mΩ on-resistance against system loss requirements. Evaluate the TSOP-6 footprint compatibility with existing PCB layouts. Consider the thermal performance limits relative to the expected ambient operating conditions and available copper area for heat dissipation during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI3457 series of single N- and P-channel MOSFETs. The series is characterized by low on-resistance and fast switching speeds achieved through advanced trench gate technology. These devices are engineered for high-density power applications where small outline packages are necessary to minimize board space consumption while maintaining reliable electrical performance.

Single FETs, MOSFETs Replacement Considerations

The SI3457BDV-T1-E3 is listed as a related variant within the same product family. Verify pinout compatibility and electrical parameter alignment before substitution. Check for any differences in lead plating or marking conventions between the GE3 and E3 suffixes.