SI4101DY-T1-GE3

$0.91

Description：MOSFET P-CH 30V 25.7A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:11edd9ede1a5 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4101DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 25.7A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4101DY-T1-GE3

Description：MOSFET P-CH 30V 25.7A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：203 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8190 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4101DY-T1-GE3

SI4101DY-T1-GE3

Single FETs, MOSFETs Overview

The SI4101DY-T1-GE3 is a P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and a maximum continuous drain current of -25.7 A at 25 °C case temperature. The device exhibits a low on-state resistance of 6 mΩ at VGS = -10 V and 8 mΩ at VGS = -4.5 V. Total gate charge is typically 203 nC at VGS = -10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
100% tested for avalanche ruggedness
Lead-free and halogen-free compliant

Single FETs, MOSFETs Applications

Adaptor Switch
Load Switch
Power Management
Notebook Computers
Portable Battery Packs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure correct packaging and compliance status. Confirm that the component meets RoHS3 requirements as stated in the datasheet. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a compact SO-8 footprint. Evaluate thermal derating curves to ensure adequate heat dissipation under steady-state conditions. Consider the gate threshold voltage and total gate charge when designing drive circuits for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4101 series, designed as a single-channel P-channel MOSFET. It utilizes advanced TrenchFET technology to achieve low on-resistance and fast switching characteristics. The device is intended for general-purpose power switching applications where efficiency and thermal performance are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Ensure any replacement matches the original pinout, voltage ratings, and thermal characteristics.