Single FETs, MOSFETs SI4412ADY-T1-GE3 product image

SI4412ADY-T1-GE3

  • Description:MOSFET N-CH 30V 5.8A 8SO
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)

SKU:8119b1252ab2 Category: Brand:

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SI4412ADY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 5.8A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4412ADY-T1-GE3

  • Description:MOSFET N-CH 30V 5.8A 8SO
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:24mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):1.3W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOIC
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4412ADY-T1-GE3

SI4412ADY-T1-GE3

Single FETs, MOSFETs Overview

The SI4412ADY-T1-GE3 is a single N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-SOIC surface-mount package. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 8A at 25°C. Key electrical characteristics include a maximum on-resistance of 2.5 milliohms at a gate-source voltage of 10V, with a gate charge of 12 nanocoulombs. The component supports a junction temperature range from -55°C to +150°C and offers a power dissipation capability of 2.5W in free air.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration utilizing TrenchFET technology for enhanced performance
  • Low on-resistance optimized for high-efficiency switching applications
  • Surface-mount construction in an 8-SOIC package for compact integration

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power management modules
  • Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm pinout compatibility and RoHS status. Ensure the selected variant matches the required thermal and electrical specifications for the target design environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component based on its 30V voltage rating and 8A current handling capabilities within an 8-SOIC footprint. Evaluate the low on-resistance and gate charge parameters to ensure suitability for the intended switching frequency and efficiency requirements of the power circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the MOSFET category. It represents a standard commercial-grade silicon-based transistor designed for general-purpose power switching tasks in electronic systems requiring reliable N-channel control.

Single FETs, MOSFETs Replacement Considerations

Official documentation lists SI4412ADY-T1-E3 as a recommended alternative. Verify that any substitute maintains identical pin configurations and electrical ratings to ensure direct compatibility without circuit modification.

SI4412ADY-T1-GE3SI4412ADY-T1-GE3

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