SI5406CDC-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI5406CDC-T1-GE3 is a single-channel N-channel Power MOSFET utilizing TrenchFET technology. It features a 12 V drain-source voltage rating and a maximum continuous drain current of 6 A. The device offers low on-state resistance, specified as 0.020 Ω at VGS = 4.5 V and 0.027 Ω at VGS = 1.8 V. Total gate charge is typically 11.5 nC at VGS = 4.5 V. It is housed in a leadless 1206-8 ChipFET package designed for surface mount applications.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET power MOSFET technology to achieve low on-state resistance.
• Features a leadless 1206-8 ChipFET package with multiple drain pins for enhanced thermal dissipation.
• Manufactured using halogen-free materials.

Single FETs, MOSFETs Applications

• Load and power switching for cell phones and pagers
• Power amplifier (PA) switching in cellular devices
• Battery operated systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official documentation before procurement. Confirm RoHS compliance status and halogen-free material declarations directly from the datasheet. Ensure that the component's absolute maximum ratings are strictly observed during design to prevent permanent damage or reliability issues.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact footprint with high thermal performance comparable to larger packages. Evaluate the junction-to-ambient thermal resistance based on the specific PCB copper area and pad pattern used. Verify that the gate drive voltage meets the requirements for the desired on-state resistance level.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix Si5406 series of single-channel N-channel MOSFETs. It is manufactured using silicon technology and utilizes the proprietary TrenchFET process. The device is available in a leadless 1206-8 ChipFET package, which provides a significant reduction in board area compared to traditional surface-mount packages while maintaining robust power handling capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without validating pinouts, electrical parameters, and thermal characteristics against the original specifications.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ± 8 V.

How does the package design affect thermal performance?

The 1206-8 ChipFET package includes multiple drain pins to enhance power dissipation. Thermal performance is significantly improved by increasing the copper pad area connected to these drain pins.