SI6459BDQ-T1-E3

$0.36

Description：MOSFET P-CH 60V 2.2A 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:1593872d9b53 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI6459BDQ-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 2.2A 8TSSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI6459BDQ-T1-E3

Description：MOSFET P-CH 60V 2.2A 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：115mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-TSSOP
Package / Case：8-TSSOP (0.173", 4.40mm Width)

Single FETs, MOSFETs datasheet and documents for SI6459BDQ-T1-E3

SI6459BDQ-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI6459BDQ-T1-E3 is a P-channel MOSFET utilizing TrenchFET technology, housed in an 8-TSSOP surface-mount package. It features a drain-source voltage of -60 V and a continuous drain current of -2.7 A at 25 °C. The on-state resistance is specified as 0.115 Ω at VGS = -10 V and 0.150 Ω at VGS = -4.5 V. Total gate charge reaches a maximum of 22 nC at VGS = -10 V. The device operates within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
Halogen-free construction per IEC 61249-2-21
RoHS Directive 2002/95/EC compliant

Single FETs, MOSFETs Applications

Power management circuits
Load switches
DC/DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the datasheet revision matches the specific production lot requirements. Ensure that the ordering suffix corresponds to the desired lead-free and halogen-free specifications. Validate all electrical parameters against the latest official documentation before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Evaluate thermal dissipation capabilities based on the intended PCB layout and ambient operating conditions. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance. Consider the maximum power dissipation limits relative to the expected duty cycle and pulse width requirements for the specific application design.

Single FETs, MOSFETs Part Context

This component belongs to the Si6459BDQ series of P-channel MOSFETs manufactured by Vishay Siliconix. It utilizes advanced TrenchFET technology to achieve low on-resistance and efficient switching characteristics. The device is designed for surface-mount applications requiring robust performance in compact form factors.

Single FETs, MOSFETs Replacement Considerations

The lead-free variant with identical electrical specifications is designated as SI6459BDQ-T1-GE3. Verify pinout compatibility and thermal characteristics when substituting components from different manufacturers.