SI7112DN-T1-E3

$2.02

Description：MOSFET N-CH 30V 11.3A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9a096b9b7924 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SI7112DN-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 11.3A PPAK1212-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7112DN-T1-E3

Description：MOSFET N-CH 30V 11.3A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2610 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-50°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SI7112DN-T1-E3

SI7112DN-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7112DN-T1-E3 is a single N-channel TrenchFET power MOSFET designed for fast switching applications. It features a 30 V drain-source voltage rating and utilizes the PowerPAK 1212-8 surface-mount package. The device offers a maximum on-state resistance of 7.5 mΩ at VGS = 10 V, supporting a continuous drain current of 17.8 A. Key dynamic parameters include a total gate charge of 27 nC and a body diode reverse recovery time of 60 ns.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET technology to achieve low thermal resistance within a compact leadless package profile.
Features a 100% Rg tested design to ensure reliable gate drive performance.
Constructed with halogen-free materials compliant with IEC 61249-2-21 definitions.

Single FETs, MOSFETs Applications

Synchronous rectification circuits
Space-constrained power management designs
High-efficiency DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability upon receipt. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain solderability and electrical integrity during assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for high-current switching applications. The PowerPAK 1212-8 package provides superior thermal dissipation compared to standard SO-8 packages while occupying a smaller footprint. Evaluate PCB copper spreading capabilities to maximize heat dissipation efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7112 series of N-channel MOSFETs. It is specifically engineered to replace larger packages in applications where board space is limited but thermal performance remains critical. The TrenchFET architecture allows for optimized trade-offs between conduction losses and switching speeds.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Cross-referencing requires matching absolute maximum ratings, thermal characteristics, and pinout configurations to ensure functional compatibility without circuit modification.