SI7309DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix Si7309DN-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 surface-mount package. It features a drain-source voltage rating of -60 V and a continuous drain current of -8 A at case temperatures of 25 °C. The device exhibits a maximum on-state resistance of 0.146 Ω at VGS = -4.5 V and 0.115 Ω at VGS = -10 V. Total gate charge is typically 14.5 nC at VGS = -10 V. Thermal performance includes a junction-to-case resistance of 5.6 °C/W and a junction-to-ambient resistance of 39 °C/W maximum.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET technology for optimized switching performance
• Leadless PowerPAK 1212-8 package with low thermal resistance and small footprint
• Halogen-free construction compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

• CCFL inverters
• Class D amplifiers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm halogen-free status. The GE3 designation indicates lead-free and halogen-free compliance, whereas the E3 variant is lead-free only. Confirm that the component matches the required RoHS and REACH SVHC declarations for your manufacturing process before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel solution with high current capability is needed. The low on-resistance supports efficient switching in space-constrained designs. Ensure the PCB layout provides adequate copper area for the exposed drain pad to maintain the specified thermal resistance ratings under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7 series of single N- and P-channel MOSFETs. It utilizes the PowerPAK 1212-8 package, which offers superior thermal dissipation compared to standard SO-8 or TSSOP-8 packages while maintaining a significantly smaller footprint. The device is designed for general-purpose switching applications requiring robust performance in limited board space.

Single FETs, MOSFETs Replacement Considerations

Datasheet documentation lists SI7909DN-T1-GE3 as a recommended alternative. Verify pinout compatibility and electrical parameter alignment before substitution.