Single FETs, MOSFETs SI7848DP-T1-E3 product image

SI7848DP-T1-E3

$3.32
  • Description:MOSFET N-CH 40V 10.4A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:852dd1cb7176 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

SI7848DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 10.4A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7848DP-T1-E3

  • Description:MOSFET N-CH 40V 10.4A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:10.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:28 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):1.83W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7848DP-T1-E3

SI7848DP-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7848DP-T1-E3 is a single N-channel Power MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 17 A at 25 °C. The device offers a low on-state resistance of 9 mΩ at VGS = 10 V and 12 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8 with a 1.07 mm profile, it provides optimized thermal performance for surface mount applications.

Single FETs, MOSFETs Feature Summary

  • TrenchFET power MOSFET technology designed for fast switching and PWM optimization
  • Low thermal resistance achieved through the new leadless PowerPAK SO-8 package
  • Logic-level gate drive capability with low on-state resistance at VGS = 4.5 V

Single FETs, MOSFETs Applications

  • Synchronous buck converters
  • Synchronous rectifier circuits
  • DC/DC converter modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the E3 suffix. Ensure proper handling procedures are followed due to the exposed copper terminals characteristic of the leadless PowerPAK SO-8 package design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and high efficiency in synchronous rectification topologies. The logic-level gate threshold supports direct drive from standard logic controllers. Evaluate thermal management requirements based on the specific ambient temperature conditions and PCB copper area available for heat dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI78 series of N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which is distinct from standard SOIC packages due to its leadless construction and lower profile. The series is engineered for high-density power conversion applications where space constraints and thermal efficiency are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified replacement part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the printed circuit board layout.

Single FETs, MOSFETs FAQ

Is the Si7848DP suitable for logic-level driving?

Yes, the device specifies an on-state resistance of 12 mΩ at a gate-source voltage of 4.5 V, making it suitable for logic-level control applications.

What is the maximum junction temperature rating?

The operating junction and storage temperature range extends up to +150 °C.

SI7848DP-T1-E3SI7848DP-T1-E3
$3.32
Buy Now

Recent News